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Main ANOVA Page |
SiRstv Dataset |
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Name:
SiRstv
Certification Method & Definitions
5 Treatments
5 Replicates/Cell
25 Observations
3 Constant Leading Digits
Lower Level of Difficulty
Observed Data
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| Additional Information |
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| Dataset Name: |
SiRstv |
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| Procedure: |
Analysis of Variance Certification Method & Definitions |
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| Data: |
1 Factor 5 Treatments 5 Replicates/Cell 25 Observations 3 Constant Leading Digits Lower Level of Difficulty Observed Data |
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| Model: | 6 Parameters ()
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| Measurements of bulk resistivity of silicon wafers were made at NIST with 5 probing instruments on each of 5 days. The wafers were doped with phosphorous by neutron transmutation doping in order to have nominal resistivities of 200 ohm.cm. Each data point is the average of 6 measurements at the center of each wafer. Measurements were carried out with four-point DC probes according to ASTM Standard F84-93, "Standard Method for Measuring Resistivity of Silicon Wafers with an In-Line Four-Point Probe." | ||||